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2SK3529-01 - 

MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-

Fuji Semiconductor 2SK3529-01
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制造商產(chǎn)品編號(hào):
2SK3529-01
倉(cāng)庫(kù)庫(kù)存編號(hào):
70212470
技術(shù)數(shù)據(jù)表:
View 2SK3529-01 Datasheet Datasheet
訂購(gòu)熱線(xiàn): 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

2SK3529-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
  • 2SK3529-01產(chǎn)品信息

      Application  For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  
      Capacitance, Input  740 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±7 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  21.5 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  195 W  
      Resistance, Drain to Source On  1.9 Ω  
      Resistance, Thermal, Junction to Case  0.640 °C?W (Max.)  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  40 ns  
      Time, Turn-On Delay  21 ns  
      Transconductance, Forward  8.2 S  
      Typical Gate Charge @ Vgs  21.5 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  800 V  
      Voltage, Drain to Source  800 V  
      Voltage, Forward, Diode  0.9 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

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    2SK3529-01相關(guān)搜索

    Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor MOSFET Transistors Application For switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.   Capacitance, Input 740 pF @ 25 V  Fuji Semiconductor Capacitance, Input 740 pF @ 25 V  MOSFET Transistors Capacitance, Input 740 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 740 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   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Transistors Time, Turn-Off Delay 40 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 40 ns   Time, Turn-On Delay 21 ns  Fuji Semiconductor Time, Turn-On Delay 21 ns  MOSFET Transistors Time, Turn-On Delay 21 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 21 ns   Transconductance, Forward 8.2 S  Fuji Semiconductor Transconductance, Forward 8.2 S  MOSFET Transistors Transconductance, Forward 8.2 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 8.2 S   Typical Gate Charge @ Vgs 21.5 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 21.5 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 21.5 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 21.5 nC @ 10 V   Voltage, Breakdown, Drain to Source 800 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 800 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 800 V   Voltage, Drain to Source 800 V  Fuji Semiconductor Voltage, Drain to Source 800 V  MOSFET Transistors Voltage, Drain to Source 800 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 800 V   Voltage, Forward, Diode 0.9 V  Fuji Semiconductor Voltage, Forward, Diode 0.9 V  MOSFET Transistors Voltage, Forward, Diode 0.9 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.9 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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