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2SK3522-01 - 

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.2Ohm; ID +/-25A; TO-247; PD 335W; VGS +/-30V

Fuji Semiconductor 2SK3522-01
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制造商產(chǎn)品編號(hào)：
2SK3522-01
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70212524
技術(shù)數(shù)據(jù)表：
View 2SK3522-01 Datasheet Datasheet
訂購(gòu)熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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2SK3522-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`

    • 2SK3522-01產(chǎn)品信息

      Application  Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  
      Capacitance, Input  2280 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±25 A  
      Dimensions  15.5 x 5 x 21.5 mm  
      Gate Charge, Total  54 nC  
      Height  0.846" (21.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-247  
      Polarization  N-Channel  
      Power Dissipation  335 W  
      Resistance, Drain to Source On  0.26 Ω  
      Resistance, Thermal, Junction to Case  0.373 °C?W (Max.)  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  50 °C⁄W  
      Time, Turn-Off Delay  75 ns  
      Time, Turn-On Delay  27 ns  
      Transconductance, Forward  22 sec  
      Typical Gate Charge @ Vgs  54 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  0.98 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.197" (5mm)  
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    • 參考圖片
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    2SK3522-01相關(guān)搜索

    Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  MOSFET Transistors Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.  Fuji Semiconductor MOSFET Transistors Application Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.   Capacitance, Input 2280 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2280 pF @ 25 V  MOSFET Transistors Capacitance, Input 2280 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2280 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel 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(15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-247  Fuji Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  Fuji 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Semiconductor Time, Turn-Off Delay 75 ns  MOSFET Transistors Time, Turn-Off Delay 75 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 75 ns   Time, Turn-On Delay 27 ns  Fuji Semiconductor Time, Turn-On Delay 27 ns  MOSFET Transistors Time, Turn-On Delay 27 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 27 ns   Transconductance, Forward 22 sec  Fuji Semiconductor Transconductance, Forward 22 sec  MOSFET Transistors Transconductance, Forward 22 sec  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 22 sec   Typical Gate Charge @ Vgs 54 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 54 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 54 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 54 nC @ 10 V   Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  Fuji Semiconductor Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 0.98 V  Fuji Semiconductor Voltage, Forward, Diode 0.98 V  MOSFET Transistors Voltage, Forward, Diode 0.98 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.98 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Fuji Semiconductor MOSFET Transistors Width 0.197" (5mm)  
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