2SK2642-01MR產(chǎn)品概述
500 V Drain to Source Voltage, 50 W Power Dissipation, NChannel Silicon Power MOSFET
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS is +/-35 V guarantee Avalanche-proof
F-I Series = Low RDS(ON)F-II Series = VGS ±30 V, Reduced Turn Off TimeFAP-II Series = High Avalanche RuggednessFAP-III = Logic Level, High Avalanche RuggednessFAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 VFAP-IIA = Reduced Turn Off TimeFAP-IIIBH = High Speed Non LogicFAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 VFAP-G = Ultra Fast Switching
F-I Series = Low RDS(ON)F-II Series = VGS ±30 V, Reduced Turn Off TimeFAP-II Series = High Avalanche RuggednessFAP-III = Logic Level, High Avalanche RuggednessFAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 VFAP-IIA = Reduced Turn Off TimeFAP-IIIBH = High Speed Non LogicFAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 VFAP-G = Ultra Fast Switching