1MBH25D-120 - 

Capacitance, Gate 2500 pF  Fuji Semiconductor Capacitance, Gate 2500 pF  IGBT Transistor Modules Capacitance, Gate 2500 pF  Fuji Semiconductor IGBT Transistor Modules Capacitance, Gate 2500 pF   Channel Type N  Fuji Semiconductor Channel Type N  IGBT Transistor Modules Channel Type N  Fuji Semiconductor IGBT Transistor Modules Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  IGBT Transistor Modules Configuration Single  Fuji Semiconductor IGBT Transistor Modules Configuration Single   Current, Collector 38 A  Fuji Semiconductor Current, Collector 38 A  IGBT Transistor Modules Current, Collector 38 A  Fuji Semiconductor IGBT Transistor Modules Current, Collector 38 A   Dimensions 20.5 x 5 x 26 mm  Fuji Semiconductor Dimensions 20.5 x 5 x 26 mm  IGBT Transistor Modules Dimensions 20.5 x 5 x 26 mm  Fuji Semiconductor IGBT Transistor Modules Dimensions 20.5 x 5 x 26 mm   Length 0.807" (20.5mm)  Fuji Semiconductor Length 0.807" (20.5mm)  IGBT Transistor Modules Length 0.807" (20.5mm)  Fuji Semiconductor IGBT Transistor Modules Length 0.807" (20.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  IGBT Transistor Modules Mounting Type Through Hole  Fuji Semiconductor IGBT Transistor Modules Mounting Type Through Hole   Number of Pins 3  Fuji Semiconductor Number of Pins 3  IGBT Transistor Modules Number of Pins 3  Fuji Semiconductor IGBT Transistor Modules Number of Pins 3   Package Type TO-3PL  Fuji Semiconductor Package Type TO-3PL  IGBT Transistor Modules Package Type TO-3PL  Fuji Semiconductor IGBT Transistor Modules Package Type TO-3PL   Polarity N-Channel  Fuji Semiconductor Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  Fuji Semiconductor IGBT Transistor Modules Polarity N-Channel   Power Dissipation 310 W  Fuji Semiconductor Power Dissipation 310 W  IGBT Transistor Modules Power Dissipation 310 W  Fuji Semiconductor IGBT Transistor Modules Power Dissipation 310 W   Primary Type Si  Fuji Semiconductor Primary Type Si  IGBT Transistor Modules Primary Type Si  Fuji Semiconductor IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.4 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.4 °C/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.4 °C/W  Fuji Semiconductor IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.4 °C/W   Type Switching  Fuji Semiconductor Type Switching  IGBT Transistor Modules Type Switching  Fuji Semiconductor IGBT Transistor Modules Type Switching   Voltage, Collector to Emitter 1200 V  Fuji Semiconductor Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  Fuji Semiconductor Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  IGBT Transistor Modules Width 0.197" (5mm)  Fuji Semiconductor IGBT Transistor Modules Width 0.197" (5mm)